smb10j5.0 thru 40a and smb8j5.0c thru 40ca vishay semiconductors formerly general semiconductor document number 88422 www.vishay.com 11-mar-04 1 new product high power density surface mount t rans z orb ? transient voltage suppressors stand-off voltage 5.0 to 40v peak pulse power 1000w (unidirectional) 800w (bidirectional) devices for bidirectional applications for bi-directional devices, use suffix c or ca (e.g. smb8j10ca). electrical characteristics apply in both directions. maximum ratings & thermal characteristics ratings at 25c ambient temperature unless otherwise specified. parameter symbol value unit peak pulse power dissipation with unidirectional p ppm 1000 w a 10/1000 s waveform (1,2) (see fig. 1) bidirectional 800 peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3ms single half sine-wave i fsm 100 a uni-directional only (2) typical thermal resistance, junction to ambient (3) r ja 72 c/w typical thermal resistance, junction to lead r jl 20 c/w operating junction and storage temperature range t j , t stg ?55 to +150 c notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25c per fig. 2 (2) mounted on 0.2 x 0.2? (5.0 x 5.0mm) copper pads to each terminal (3) mounted on minimum recommended pad layout 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band dimensions in inches and (millimeters) do-214aa (smb) features ? 1000w for unidirectional and 800w for bidirectional peak pulse power capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.01% ? plastic package has underwriters laboratory flammability classification 94v-0 ? low profile package with built-in strain relief for surface mounted applications ? glass passivated junction ? low incremental surge resistance, excellent clamping capability ? very fast response time mechanical data case: jedec do-214aa molded plastic over passivated chip terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250c/10 seconds at terminals polarity: for uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.003oz., 0.093g 0.085 max (2.16 max) 0.060 min (1.52 min) 0.220 ref 0.086 min (2.20 min) mounting pad layout
smb10j5.0 thru 40a and smb8j5.0c thru 40ca vishay semiconductors formerly general semiconductor www.vishay.com document number 88422 2 11-mar-04 unidirectional electrical characteristics ratings at 25c ambient temperature unless otherwise specified. v f = 3.5v at i f = 50a (uni-directional only) breakdown maximum maximum maximum device type device voltage test stand-off reverse leakage peak pulse surge clamping marking v (br) (v) (1) current voltage at v wm current i ppm voltage at i ppm code min max at i t (ma) v wm (v) i d ( a) (a) (2) v c (v) smb10j5.0 1ad 6.40 7.82 10 5.0 1000 104.2 9.6 smb10j5.0a 1ae 6.40 7.07 10 5.0 1000 108.7 9.2 smb10j6.0 1af 6.67 8.15 10 6.0 1000 87.7 11.4 smb10j6.0a 1ag 6.67 7.37 10 6.0 1000 97.1 10.3 smb10j6.5 1ah 7.22 8.82 10 6.5 500 81.3 12.3 smb10j6.5a 1ak 7.22 7.98 10 6.5 500 89.3 11.2 smb10j7.0 1al 7.78 9.51 10 7.0 200 75.2 13.3 smb10j7.0a 1am 7.78 8.60 10 7.0 200 83.3 12.0 smb10j7.5 1an 8.33 10.2 1.0 7.5 100 69.9 14.3 smb10j7.5a 1ap 8.33 9.21 1.0 7.5 100 77.5 12.9 smb10j8.0 1aq 8.89 10.9 1.0 8.0 50 66.7 15.0 smb10j8.0a 1ar 8.89 9.83 1.0 8.0 50 73.5 13.6 smb10j8.5 1as 9.44 11.5 1.0 8.5 20 62.9 15.9 smb10j8.5a 1at 9.44 10.4 1.0 8.5 20 69.4 14.4 smb10j9.0 1au 10.0 12.2 1.0 9.0 10 59.2 16.9 smb10j9.0a 1av 10.0 11.1 1.0 9.0 10 64.9 15.4 smb10j10 1aw 11.1 13.6 1.0 10 5.0 53.2 18.8 smb10j10a 1ax 11.1 12.3 1.0 10 5.0 58.8 17.0 smb10j11 1ay 12.2 14.9 1.0 11 5.0 49.8 20.1 smb10j11a 1az 12.2 13.5 1.0 11 5.0 54.9 18.2 smb10j12 1bd 13.3 16.3 1.0 12 5.0 45.5 22.0 smb10j12a 1be 13.3 14.7 1.0 12 5.0 50.3 19.9 smb10j13 1bf 14.4 17.6 1.0 13 1.0 42.0 23.8 smb10j13a 1bg 14.4 15.9 1.0 13 1.0 46.5 21.5 smb10j14 1bh 15.6 19.1 1.0 14 1.0 38.8 25.8 smb10j14a 1bk 15.6 17.2 1.0 14 1.0 43.1 23.2 smb10j15 1bl 16.7 20.4 1.0 15 1.0 37.2 26.9 smb10j15a 1bm 16.7 18.5 1.0 15 1.0 41.0 24.4 smb10j16 1bn 17.8 21.8 1.0 16 1.0 34.7 28.8 smb10j16a 1bp 17.8 19.7 1.0 16 1.0 38.5 26.0 smb10j17 1bq 18.9 23.1 1.0 17 1.0 32.8 30.5 smb10j17a 1br 18.9 20.9 1.0 17 1.0 36.2 27.6 smb10j18 1bs 20.0 24.4 1.0 18 1.0 31.1 32.2 smb10j18a 1bt 20.0 22.1 1.0 18 1.0 34.2 29.2 smb10j20 1bu 22.2 27.1 1.0 20 1.0 27.9 35.8 smb10j20a 1bv 22.2 24.5 1.0 20 1.0 30.9 32.4 smb10j22 1bw 24.4 29.8 1.0 22 1.0 25.4 39.4 smb10j22a 1bx 24.4 26.9 1.0 22 1.0 28.2 35.5 smb10j24 1by 26.7 32.6 1.0 24 1.0 23.3 43.0 smb10j24a 1bz 26.7 29.5 1.0 24 1.0 25.7 38.9 smb10j26 1cd 28.9 35.3 1.0 26 1.0 21.5 46.6 smb10j26a 1ce 28.9 31.9 1.0 26 1.0 23.8 42.1 smb10j28 1cf 31.1 38.0 1.0 28 1.0 20.0 50.0 smb10j28a 1cg 31.1 34.4 1.0 28 1.0 22.0 45.4 smb10j30 1ch 33.3 40.7 1.0 30 1.0 18.7 53.5 smb10j30a 1ck 33.3 36.8 1.0 30 1.0 20.7 48.4 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
smb10j5.0 thru 40a and smb8j5.0c thru 40ca vishay semiconductors formerly general semiconductor document number 88422 www.vishay.com 11-mar-04 3 unidirectional electrical characteristics ratings at 25c ambient temperature unless otherwise specified. v f = 3.5v at i f = 50a (uni-directional only) breakdown maximum maximum maximum device type device voltage test stand-off reverse leakage peak pulse surge clamping marking v (br) (v) (1) current voltage at v wm current i ppm voltage at i ppm code min max at i t (ma) v wm (v) i d ( a) (a) (2) v c (v) smb10j33 1cl 36.7 44.9 1.0 33 1.0 16.9 59.0 smb10j33a 1cm 36.7 40.6 1.0 33 1.0 18.8 53.3 smb10j36 1cn 40.0 48.9 1.0 36 1.0 15.6 64.3 smb10j36a 1cp 40.0 44.2 1.0 36 1.0 17.2 58.1 smb10j40 1cq 44.4 54.3 1.0 40 1.0 14.0 71.4 smb10j40a 1cr 44.4 49.1 1.0 40 1.0 15.5 64.5 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
smb10j5.0 thru 40a and smb8j5.0c thru 40ca vishay semiconductors formerly general semiconductor www.vishay.com document number 88422 4 11-mar-04 bidirectional electrical characteristics ratings at 25c ambient temperature unless otherwise specified. breakdown maximum maximum maximum device type device voltage test stand-off reverse leakage peak pulse surge clamping marking v (br) (v) (1) current voltage at v wm current i ppm voltage at i ppm code min max at i t (ma) v wm (v) i d ( a) (3) (a) (2) v c (v) smb8j5.0c 1ad 6.40 7.82 10 5.0 2000 83.3 9.6 smb8j5.0ca 1ae 6.40 7.25 10 5.0 2000 87.0 9.2 smb8j6.0c 1af 6.67 8.15 10 6.0 2000 70.2 11.4 smb8j6.0ca 1ag 6.67 7.37 10 6.0 2000 77.7 10.3 smb8j6.5c 1ah 7.22 8.82 10 6.5 1000 65.0 12.3 smb8j6.5ca 1ak 7.22 7.98 10 6.5 1000 71.4 11.2 smb8j7.0c 1al 7.78 9.51 10 7.0 400 60.2 13.3 smb8j7.0ca 1am 7.78 8.60 10 7.0 400 66.7 12.0 smb8j7.5c 1an 8.33 10.2 1.0 7.5 200 55.9 14.3 smb8j7.5ca 1ap 8.33 9.21 1.0 7.5 200 62.0 12.9 smb8j8.0c 1aq 8.89 10.9 1.0 8.0 100 53.3 15.0 smb8j8.0ca 1ar 8.89 9.83 1.0 8.0 100 58.8 13.6 smb8j8.5c 1as 9.44 11.5 1.0 8.5 40 50.3 15.9 smb8j8.5ca 1at 9.44 10.4 1.0 8.5 40 55.6 14.4 smb8j9.0c 1au 10.0 12.2 1.0 9.0 20 47.3 16.9 smb8j9.0ca 1av 10.0 11.1 1.0 9.0 20 51.9 15.4 smb8j10c 1aw 11.1 13.6 1.0 10 10 42.6 18.8 smb8j10ca 1ax 11.1 12.3 1.0 10 10 47.1 17.0 smb8j11c 1ay 12.2 14.9 1.0 11 5.0 39.8 20.1 smb8j11ca 1az 12.2 13.5 1.0 11 5.0 44.0 18.2 smb8j12c 1bd 13.3 16.3 1.0 12 5.0 36.4 22.0 smb8j12ca 1be 13.3 14.7 1.0 12 5.0 40.2 19.9 smb8j13c 1bf 14.4 17.6 1.0 13 1.0 33.6 23.8 smb8j13ca 1bg 14.4 15.9 1.0 13 1.0 37.2 21.5 smb8j14c 1bh 15.6 19.1 1.0 14 1.0 31.0 25.8 smb8j14ca 1bk 15.6 17.2 1.0 14 1.0 34.5 23.2 smb8j15c 1bl 16.7 20.4 1.0 15 1.0 29.7 26.9 smb8j15ca 1bm 16.7 18.5 1.0 15 1.0 32.8 24.4 smb8j16c 1bn 17.8 21.8 1.0 16 1.0 27.8 28.8 smb8j16ca 1bp 17.8 19.7 1.0 16 1.0 30.8 26.0 smb8j17c 1bq 18.9 23.1 1.0 17 1.0 26.2 30.5 smb8j17ca 1br 18.9 20.9 1.0 17 1.0 29.0 27.6 smb8j18c 1bs 20.0 24.4 1.0 18 1.0 24.8 32.2 smb8j18ca 1bt 20.0 22.1 1.0 18 1.0 27.4 29.2 smb8j20c 1bu 22.2 27.1 1.0 20 1.0 22.3 35.8 smb8j20ca 1bv 22.2 24.5 1.0 20 1.0 24.7 32.4 smb8j22c 1bw 24.4 29.8 1.0 22 1.0 20.3 39.4 smb8j22ca 1bx 24.4 26.9 1.0 22 1.0 22.5 35.5 smb8j24c 1by 26.7 32.6 1.0 24 1.0 18.6 43.0 smb8j24ca 1bz 26.7 29.5 1.0 24 1.0 20.6 38.9 smb8j26c 1cd 28.9 35.3 1.0 26 1.0 17.2 46.6 smb8j26ca 1ce 28.9 31.9 1.0 26 1.0 19.0 42.1 smb8j28c 1cf 31.1 38.0 1.0 28 1.0 16.0 50.0 smb8j28ca 1cg 31.1 34.4 1.0 28 1.0 17.6 45.4 smb8j30c 1ch 33.3 40.7 1.0 30 1.0 15.0 53.5 smb8j30ca 1ck 33.3 36.8 1.0 30 1.0 16.5 48.4 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
smb10j5.0 thru 40a and smb8j5.0c thru 40ca vishay semiconductors formerly general semiconductor document number 88422 www.vishay.com 11-mar-04 5 bidirectional electrical characteristics ratings at 25c ambient temperature unless otherwise specified. breakdown maximum maximum maximum device type device voltage test stand-off reverse leakage peak pulse surge clamping marking v (br) (v) (1) current voltage at v wm current i ppm voltage at i ppm code min max at i t (ma) v wm (v) i d ( a) (3) (a) (2) v c (v) smb8j33c 1cl 36.7 44.9 1.0 33 1.0 13.6 59.0 smb8j33ca 1cm 36.7 40.6 1.0 33 1.0 15.0 53.3 smb8j36c 1cn 40.0 48.9 1.0 36 1.0 12.4 64.3 smb8j36ca 1cp 40.0 44.2 1.0 36 1.0 13.8 58.1 smb8j40c 1cq 44.4 54.3 1.0 40 1.0 11.2 71.4 smb8j40ca 1cr 44.4 49.1 1.0 40 1.0 12.4 64.5 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
smb10j5.0 thru 40a and smb8j5.0c thru 40ca vishay semiconductors formerly general semiconductor www.vishay.com document number 88422 6 11-mar-04 ratings and characteristic curves (t a = 25c unless otherwise noted) 0 25 50 75 100 0 75 25 50 100 125 150 175 200 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a ? ambient temperature ( c) fig. 2 ? pulse derating curve p ppm ? peak pulse power (kw) fig. 1 ? peak pulse power rating curve 0.1 1 10 100 0.1 s 1.0 s10 s t d ? pulse width (sec.) 100 s 1.0ms 10ms 0.2 x 0.2" (0.5 x 0.5mm) copper pad areas smb8j5.0c - smb8j40ca smb10j5.0 - smb10j40a fig. 6 ? maximum non-repetitive peak forward surge current number of cycles at 60h z 10 200 100 110 100 8.3ms single half sine-wave (jedec method) unidirectional only i fsm ? peak forward surge current (a) t p ? pulse duration (sec) transient thermal impedance ( c/w) fig. 5 ? typical transient thermal impedance 1.0 10 100 0.01 0.1 1 10 100 1000 0 50 100 150 i ppm ? peak pulse current, % i rsm fig. 3 ? pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm non-repetitive pulse waveform shown in fig. 3 t a = 25 c tr = 10 sec. peak value i ppm half value ? ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t ? time (ms) c j ? junction capacitance (pf) fig. 4 ? typical junction capacitance 10 100 1,000 10,000 10 1 100 v wm ? reverse stand-off voltage (v) t j = 25 c f = 1.0mhz vsig = 50mvp-p v r , measured at stand-off voltage, v wm measured at zero bias uni- directional bi- directional
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